CSPI’s Chemical Cuisine is the web’s definitive rating of the chemicals used to preserve foods and affect their taste, texture, or appearance. Besides titanium dioxide, the group recommends avoiding artificial sweeteners like aspartame, acesulfame potassium, and sucralose, as well as synthetic food dyes like Yellow 5 and Red 3. CSPI and others have recently asked the Food and Drug Administration to ban the latter dye in foods and ingested drugs because the FDA has already determined that it is a carcinogen unsafe for use in cosmetics.

Lithopone B301, Lithopone B311 powder is also called C.I. 77115; Pigment White 5; Barium zinc sulfate sulfide and belongs to Product Categories of Inorganic & organic chemicals; uvcbs-inorganic. Lithopone B301, Lithopone B311 powder is used in water-based paints because of its excellent alkali resistance. It is widely utilized as a whitener and reinforcing agent for rubber and as a filler and whitener for paper. Lithopone B301, Lithopone B311 powder is considered to be poisonous because it is able to liberate hydrogen sulfide upon decomposition by heat, moisture, and acids. When heated to decomposition Lithopone B301, Lithopone B311 powder emits highly toxic fumes of SOx, ZnO, and H2S.

Chinese anatase titanium dioxide has become a popular topic in the field of materials science due to its unique properties and wide range of applications. Anatase titanium dioxide is a type of titanium dioxide with the chemical formula TiO2, and is known for its high refractive index, excellent UV resistance, and good photocatalytic activity.

Hemolysis was studied on suspensions of P25TiO₂NPs (0.2 mg/mL and 0.02 mg/mL), vitaminB2@P25TiO₂NPs (0.2 mg/mL and 0.02 mg/mL) and vitamin B2 (0.2 mg/mL and 0.02 mg/mL) were prepared and mixed with 500 μL of anticoagulated blood (donated by Laboratorio de Hemoderivados, UNC) in a rate of 1/10. A solution of NaCl 10% was used as the positive control and PBS as the negative control. Then, the samples were irradiated using the LED described above for 3 and 6 h to simulate the light penetration into the skin. Also, a set of samples was kept in the dark as control. Finally, the samples were centrifuged and the absorbance at 540 nm was measured in the supernatants. The experiment was reproduced twice; the standard deviation was calculated and p-value < 0.05 were considered significant.

The basic scenario of resistive switching in TiO₂ (Jameson et al., 2007) assumes the formation and electromigration of oxygen vacancies between the electrodes (Baiatu et al., 1990), so that the distribution of concomitant n-type conductivity (Janotti et al., 2010) across the volume can eventually be controlled by an external electric bias, as schematically shown in Figure 1B. Direct observations with transmission electron microscopy (TEM) revealed more complex electroforming processes in TiO₂ thin films. In one of the studies, a continuous Pt filament between the electrodes was observed in a planar Pt/TiO₂/Pt memristor (Jang et al., 2016). As illustrated in Figure 1C, the corresponding switching mechanism was suggested as the formation of a conductive nanofilament with a high concentration of ionized oxygen vacancies and correspondingly reduced Ti³⁺ ions. These ions induce detachment and migration of Pt atoms from the electrode via strong metal–support interactions (Tauster, 1987). Another TEM investigation of a conductive TiO₂ nanofilament revealed it to be a Magnéli phase Ti_nO_2n−1 (Kwon et al., 2010). Supposedly, its formation results from an increase in the concentrations of oxygen vacancies within a local nanoregion above their thermodynamically stable limit. This scenario is schematically shown in Figure 1D. Other hypothesized point defect mechanisms involve a contribution of cation and anion interstitials, although their behavior has been studied more in tantalum oxide (Wedig et al., 2015; Kumar et al., 2016). The plausible origins and mechanisms of memristive switching have been comprehensively reviewed in topical publications devoted to metal oxide memristors (Yang et al., 2008; Waser et al., 2009; Ielmini, 2016) as well as TiO₂ (Jeong et al., 2011; Szot et al., 2011; Acharyya et al., 2014). The resistive switching mechanisms in memristive materials are regularly revisited and updated in the themed review publications (Sun et al., 2019; Wang et al., 2020).